Extraordinary permittivity characterization of 4H SiC at millimeter-wave frequencies

نویسندگان

چکیده

For millimeter-wave power applications, GaN high-electron mobility transistors (HEMTs) are often grown epitaxially on a high-purity semi-insulating c-axis 4H-SiC substrate. these anisotropic hexagonal materials, the design and modeling of microstrip coplanar interconnects require detailed knowledge both ordinary permittivity ε⊥ extraordinary εǁ perpendicular parallel, respectively, to c-axis. However, conventional dielectric characterization techniques make it difficult measure alone or separate from ε⊥. As result, there is little data for εǁ, especially at frequencies. This work demonstrates characterizing 4H SiC using substrate-integrated waveguides (SIWs) SIW resonators. The measured seven SIWs eleven resonators 110 170 GHz within ±1% 10.2. Because can be fabricated same substrate together with HEMTs other devices, they conveniently on-wafer precise material-device correlation. Such extended frequencies, orientations.

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ژورنال

عنوان ژورنال: Applied Physics Letters

سال: 2023

ISSN: ['1520-8842', '0003-6951', '1077-3118']

DOI: https://doi.org/10.1063/5.0148623